发明名称 Improved differential input attenuator circuit.
摘要 <p>A diode is formed in an isolated epitaxial (epi) region of a monolithic integrated circuit and connected to the operating potential applied thereto. The monolithic circuit includes a resistor formed in the isolated epi region which is connected to the input of the monolithic circuit. The operating potential applied through the diode raises the otherwise floating epi region to a voltage slightly less than the operating potential of the monolithic circuit thereby reducing the parasitic capacitance associated with the resistor-to-epi junction and the epi-to-substrate junction of the monolithic circuit. This reduction of parasitic capacitance improves the time response of the monolithic circuit.</p>
申请公布号 EP0212267(A1) 申请公布日期 1987.03.04
申请号 EP19860109814 申请日期 1986.07.17
申请人 MOTOROLA, INC. 发明人 STANLEY, MICHAEL E.
分类号 H01L27/04;H01L21/822;H01L27/02;H01L27/07;H01L29/78;H03H11/24;(IPC1-7):H01L29/86 主分类号 H01L27/04
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