| 摘要 |
A method of manufacturing a semiconductor device, in which a semiconductor substrate (1) is subjected to a surface treatment in a reactor vessel (2), through which a current (3) of a reaction gas is passed and is then pumped away by means of a mechanical pump (14) and a cooling trap (15) arranged between this pump (14) and the reactor vessel (2). The current of reaction gas (3) consists of a current (Qc) of gas condensable in the cooling trap (15) and a current (Qi) of an inert gas. According to the invention, a separate current (Qx) of an inert gas is conducted to the mechanical pump (14). This current (Qx) is practically equally as large as the current of condensable gas (Qc). Thus, a method is obtained, in which the partial pressure of the inert gas (Pi) and that of the condensable gas (Pc) in the reactor gas can be controlled to the optimum and separately.
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