发明名称 |
Low temperature tunneling transistor |
摘要 |
The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (some meV) through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage VG which modifies the barrier height between source and drain thereby changing the tunnel probability.
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申请公布号 |
US4647954(A) |
申请公布日期 |
1987.03.03 |
申请号 |
US19840654707 |
申请日期 |
1984.09.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GRAF, VOLKER;GUERET, PIERRE L.;MUELLER, CARL A. |
分类号 |
H01L29/15;H01L39/22;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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