发明名称 |
METHOD OF PRODUCING A THIN SILICON-ON-INSULATOR LAYER |
摘要 |
<p>A method of forming a thin silicon layer upon which semiconductor devices may be constructed. An epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer therein. An oxide layer is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer. The silicon substrate is removed using grinding and/or HNA, the upper portions of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop is removed using a non-selective etch. The remaining portions of the epitaxy forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness. BU9-84-031</p> |
申请公布号 |
CA1218762(A) |
申请公布日期 |
1987.03.03 |
申请号 |
CA19850495661 |
申请日期 |
1985.11.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABERNATHEY, JOHN R.;LASKY, JEROME B.;NESBIT, LARRY A.;SEDGWICK, THOMAS O.;STIFFLER, SCOTT R. |
分类号 |
H01L21/02;H01L21/20;H01L21/265;H01L21/316;H01L21/84;H01L27/12;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|