发明名称 A SEMICONDUCTOR DEVICE HAVING A CONTROL WIRING LAYER
摘要 A heating wiring layer (122) is formed on a substrate (120). An insulation layer (124) is formed on the heating wiring layer (122) so as to cover with the heating wiring layer. A control wiring layer (126), which acts as a fuse device, is formed on the insulation layer (124) transverse to the heating wiring layer (122). A programming current is directed through the heating wiring layer (122) under the control wire layer (126) which is to be programmed. The heat generated by the programming current is transmitted through the insulation layer (124) to the portion (134) or the control wiring layer which crosses the heating wiring layer (122). As a result, the control wiring layer (126) is melted by the heat and thus interrupted. Alternatively, the heat may form a eutectic mixture with the materials of two contiguous wiring layers together forming the control layer, to complete the continuity of the control layer.
申请公布号 DE3278653(D1) 申请公布日期 1988.07.14
申请号 DE19823278653 申请日期 1982.10.22
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 UCHIDA, YUKIMASA C/O PATENT DIVISION
分类号 H01L23/525;(IPC1-7):H01L23/52 主分类号 H01L23/525
代理机构 代理人
主权项
地址