| 摘要 |
PURPOSE:To quantitatively measure the ratio of a direct reaction to an accumulation reaction by using a measuring sample formed with an insulating film and a comparing reference sample simultaneously on a silicon substrate and a nonreactive substrate, and analyzing the sample by XPS. CONSTITUTION:A silicon substrate 1 and a nonreactive substrate 2 made of a sapphire substrate are disposed as a substrate material in a plasma unit, N2 or NH3 gas is used as reaction gas, and silicon nitride films are simultaneous ly formed in a high temperature atmosphere. When the silicon substrate 5 is first analyzed by XPS, a detector detects the peak of the silicon of the sub strate 1 simultaneously with the peak of the silicon of the silicon nitride films 3, 4 through a spectroscope. When the sapphire substrate 6 is then analyzed by the XPS, the peak of the silicon of the film 4 is detected. The peaks of the silicons of the substrate 1 and the silicon nitride film on the substrate 2 are compared in intensity to obtain the ratio of the film 3 to the film 4 formed on the substrate 1. |
