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发明名称
SEMICONDUCTOR CRYSTAL EPITAXY METHOD
摘要
申请公布号
JPS6412522(A)
申请公布日期
1989.01.17
申请号
JP19870169504
申请日期
1987.07.07
申请人
SEMICONDUCTOR RES FOUND;RES DEV CORP OF JAPAN
发明人
NISHIZAWA JUNICHI;KURABAYASHI TORU
分类号
H01L21/205;C30B25/16;C30B29/40
主分类号
H01L21/205
代理机构
代理人
主权项
地址
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