| 摘要 |
PURPOSE:To prevent the generation of deterioration effect of light in the condition of practical use by a method wherein the effect of SEL (state excited by light) is positively utilized. CONSTITUTION:A non-single crystal semiconductor, containing a hydrogen or halogen element, is formed on a substrate, said semiconductor is maintained in a depressed state, and an optical annealing is performed, and when an alkaline metal element is added in the semiconductor or on its surface as an adding material, the so-called SEL effect wherein current conductivity is gradually lowered can be observed. To be more precise, the unpaired hand generated by the irradiation of light is sufficiently grown in the non-single crystal semiconductor by the effect of SEL, and it is neutralized and stabilized. As a result, even when light irradiation is conducted under the practical use, an unpaired hand is grown by the above-mentioned irradiation, and the generation of Stabler- Wronskii effect, which is observed by an increase of the recombination center, can be prevented. |
