| 摘要 |
To form an interconnect in a process where a recrystallized polysilicon layer 26 is formed over an insulating layer 20 a doped region 12 is formed in the substrate 10 prior to deposition of the polysilicon layer. The polysilicon layer 26 is in contact with at least a portion of the doped region 12 through an opening in the insulative layer 20. Recrystallization takes place through this opening, and, the doped region is electrically connected to a source or drain region of a semiconductor device formed in the recrystallized layer. <IMAGE> |
