| 摘要 |
PURPOSE:To obtain a photosensor having excellent characteristics such as high sensitivity for wavelengths of near infrared ray band, flexibility, large area and low price by forming a photoelectric conversion layer which forms the photosensor of an organic semiconductor layer made of chloroindium naphthalocyanine. CONSTITUTION:A photoelectric conversion layer which forms a photosensor is formed of chloroindium naphthalocyanine represented by the structural formula I. Since the cyanine has a property of absorbing a light of 600-1000nm of wavelength, electrons are excited by high energy state. After the electrons are extracted, holes are filled in the extracted places to form electron and hole pairs, thereby photoelectrically converting. Thus, a voltage is generated between the first and second electrodes as a desired photosensor. Further, the photosensor thus has flexibility, large area and low price.
|
