| 摘要 |
PURPOSE:To obtain a light emitting element which has a light emitting amount sufficient in a visible wavelength band, and improves light emitting efficiency, reproducibility, light emitting characteristic stability, and lifetime by laminating two or more layers of amorphous crystalline Si having the prescribed characteristics, and providing a light emitting layer having homogeneous junction and a pair of electrodes connected at least with the light emitting layer. CONSTITUTION:Electrodes 102 of ITO or the like is formed on a substrate 101 of glass or the like, and a light emitting layer made of homogeneous junctions of a P-type conductive layer 103, an I-type conductive layer 104 and an N-type conductive layer 105 made of a nonsingle crystal Si which contains H atoms by photo CVD method is formed thereon. The optical band gaps of the layers 103-105 are 2.0eV or higher, local level density is 10<16>cm<-3>.eV<-1> or lower at midgap, and the quantum efficiency of the layers 103-105 is 10<-4>% or higher. Electrodes 106 made of aluminum is formed on the layer 105 to obtain a light emitting element. |
