| 摘要 |
PURPOSE:To stably manufacture a semiconductor device which emits & blue light in a mass production by forming a P-N junction of N-type and P-type ZnSyse1-y formed by a prescribed method. CONSTITUTION:After a mixture which contains excess (1.05-1.2 equivalent ratio) of low boiling point component of R1Zn and R2Se (where R is alkyl group of CH3, etc.) is thermally reacted at 0-40 deg.C for 10-180 min, matured at 30-80 deg.C for 10-120min, excess component is distilled, and removed to obtain an organic zinc compound as a zinc source. A P-N junction of ZnSySe1-y (0<=y<=1) is formed on a substrate made of GaAs by an MOSCVD method by organic compound which contains organic zinc compound, organic metal compound containing III group element as an N-type III group dopant or halogen element, carrier gas, hydrogen sulfide, hydrogen selenide, ammonia to become a P-type dopant, hydrogen phosphate, or hydrogen arsenide. Thus, a semiconductor device which emits a blue light can be manufactured in a mass production. |
