发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To enable low noise action by realizing stable single-vertical-mode oscillation by a method wherein the title device operating by basic lateral mode oscillation is made free of a current-injected region at the center. CONSTITUTION:A groove 2 is formed on an n type substrate 1; an n type clad layer 3, an n type guide layer 10, and an n type active layer 4 are formed so as to fill up the groove 2,d and then the layer 4 is removed from its center. A p type clad layer 5 and an n type layer 6 are successively formed thereon, and a current-injected region 7 is formed in the layer 6 except the center. Such a construction realizes basic lateral mode oscillation. Next, the light generating in the layer 4 propagates in a direction parallel with the region 7, and is then amplified because of the loss due to injected currents. However, the center becomes free of the state of oscillation of large amplitude because of the increase in loss. Thus, single vertical mode oscillation is always realized by the inhibition of basic lateral mode oscillation and two streaks of vertical mode oscillation; accordingly, low noise action is enabled.
申请公布号 JPS60130185(A) 申请公布日期 1985.07.11
申请号 JP19830237177 申请日期 1983.12.17
申请人 MATSUSHITA DENKI SANGYO KK 发明人 TAJIRI FUMIKO;HAMADA TAKESHI;KUME MASAHIRO;ITOU KUNIO;WADA MASARU;SHIMIZU KOUICHI
分类号 H01S5/00;H01S5/10;H01S5/20;H01S5/223 主分类号 H01S5/00
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