| 摘要 |
PURPOSE:To improve integrity by defining a semiconductor element, which composes a memory cell, and an element isolation region self-aligningly. CONSTITUTION:An MISFET Qm and a capacitance element Cs, which compose a memory cell, are formed on a p<-> type single crystal silicon substrate 1. The MISFET Qm is constituted by a gate insulating film 2, a gate electrode 3 and n<+> type semiconductor regions 4 which are to be source and drain regions. The capacitance element Cs is constituted by a dielectric film 5, a conductive plate 6 and an n<+> type semiconductor region 7 and a p<+> type semiconductor region 8. An element isolation region 10 is formed between the MISFER Qm and the capacitance element Cs and they are defined self-aligningly. With this constitution, the area on the substrate 1 occupied by the element isolation region 10 can be reduced so that integrity of the IC can be improved. |
