| 摘要 |
PURPOSE:To protect resistance element from breakdown caused by curernt concentration and improve reliability of an IC by connecting a plurality of the straight resistance elements with conductive layers composed of different material from the resistance material. CONSTITUTION:A field insulating film 2 is provided on a P<-> type semiconductor substrate 1 and an N-channel type MISFET 4, an N-channel tpe clamping MISFET 5, resistance elements 6 and a bonding pad 7 are formed on it. Conductive layers 8 are connected to them through contact holes 9. The resistance element 6 are composed of polycrystalline silicon layers and arranged linearly and connected in series with conductive layers 8E. Therefore, curved parts are eliminated from individual resistance elements 6 and current concentration can be avoided so that the breakdown of the resistance elements can be avoided and the reliability of the IC can be improved. |
