| 摘要 |
PURPOSE:To avoid fluctuation of characteristics and deterioration in reliability by a method wherein a semi-insulating layer is formed at the position which is horizontally different from the position of a Schottky junction in a semiconduc tor substrate and an electrode is extended over the semi-insulating layer to form a bonding part. CONSTITUTION:A semiconductor substrate 1 for a Schottky diode is composed of an N<+> type substrate 1a and an N-type epitaxial layer 1b formed on the substrate 1a. A CVD film 2 is formed on the layer 1b and, after a hole is drilled in the Schottky junction region, an electrode 3 is formed by evaporation. The electrode 3 is extended from the Schottky junction part 4 to a bonding part 5 of a wire 6 along the CVD film 2. On the other hand, a square semi-insulating layer 7 is formed in the epitaxial layer 1b. A plurality of electrodes 3 and semi-insulating layers 7 are formed on one pellet 8 and the wire 6 is bonded to any one of the bonding parts 5. A scribing grid region 9, on which the CVD film 2 is not formed, is provided on the substrate 1 along the circumference of the pellet 8. |
