| 摘要 |
PURPOSE:To form a thin film conductive layer easily by a method wherein an impurity, which controls the resistance value of a high melting point metal silicide film, is introduced into a polycrystalline silicide film, composed of a polycrystalline Si film and the high melting point metal silicide film formed on the polycrystalline Si film, and source and drain films. CONSTITUTION:Field oxide films 2 and 4 are channel stopper regions 3 are formed on a substrate 1 and an FET Qm, which composes a memory cell of an EF-ROM, and MISFET's Q1 and Q2, which compose peripheral circuits, are formed between them. A floating gate electrode 5 and a control gate electrode 7 are provided in the FET Qm, the gate electrode 5 is provided in the FET Q1 and the gate electrode 7 is provided in the FET Q2. Among those electrodes, the gate electrode 7 is composed of a polycrystalline silicide film which is composed of a polycrystalline Si film 7A and a high melting point metal silicide film 7B formed on the film 7A and an impurity which controls the resistance value is introduced into the polycrystalline silicide film when the source and drain regions are formed to control the resistance value. |
