| 摘要 |
PURPOSE:To improve the reproducibility of the gate electrode length by a method wherein an impurity diffusion layer having a concentration higher than the diffusion layer is formed by self alignment by means of the ion implantation with a thermal oxide silicon film as a mask in a region which is spaced apart from the end of the gate electrode by the thickness of the silicon oxide film on the sides of the silicide layer. CONSTITUTION:After sequentially laminating and forming a gate oxide film 12, polycrystalline silicon layer 13 and high-melting point metal silicide layer 14 on a semiconductor substrate 11, the region of the laminate except for a predetermined gate electrode pattern is etched away, and impurity ions 19 of the conductivity type opposite to the substrate are implanted onto the substrate by self alignment with respect tot he gate electrode pattern, forming, a low concentration diffusion layer 15. Then, a heat treatment is applied, forming a thermal oxide silicon film 17 on the substrate surface and the gate electrode surface. The impurity ions 19 exhibiting the conductivity type opposite to the substrate are implanted in high concentration onto the substrate, forming a high concentration diffusion layer 16 having one end in a region which is spaced apart from the end of the gate electrode by the thickness of the oxide film on the sides of the high-melting point silicide layer. |
