| 摘要 |
PURPOSE:To perform the current stricture easily and securely by making a current stricture layer semi-insulating. CONSTITUTION:For a current stricture layer 2 which is to be grown on a p type GaAs substrate 1, semi-insulating GaAs or semi-insulating GaAlAs which is obtained by organic metal gasphase growth MOCVD method is used. Consequently, as the current stricture layer 2 is semi-insulating, the current implanted by application of a voltage to electrodes 8 and 9 in forward direction does not flow in that part and concentrates in a groove 3 part. A current density increases and laser oscillation is generated. Then a part of the laser beam exudes from an active layer 5 and is absorbed by the current stricture layer 2. But the ratio of absorption is different between inside and outside the groove 3 and an effective difference in refractive index is produced and a light waveguide path is formed along the groove 3. At this time, the light is absorbed by the current stricture layer 2 and a pair of electron and hole is generated, however there is no possibility that a p-n junction is turned on to flow the current into an unnecessary part. |
