| 摘要 |
PURPOSE:To reduce the source resistance of a transistor by making the directions of the respective source regions and gate-drain regions of a stray gate transistor and a selective gate transistor connected to the drain region of the stray transistor orthogonal with each other. CONSTITUTION:On a substrate 22, a stray gate 26 consisting of a first layer polycrystalline silicon is provided through an insulating film 25, and a portion of the insulating film 25 on the drain 23 is a very thin oxide film 27. Above the stray gate 26, a control gate 28 consisting of a second layer polycrystalline silicon is provided so as to be spaced apart from the stray gate 26. In this structure, a layout is provided so that the respective directions of the source region 21 and the gate-drain region 23 of a stray gate transistor 1 and the source region 24 and the gate-drain region 7 of a selective gate transistor 2 are orthogonal with each other. |
