| 摘要 |
PURPOSE:To realize yield improvement, by connecting word lines, which are extended from the terminal parts of memory cells, with polysilicon links fusible with laser light, and besides by forming spare memory cells on the extension of the polysilicon links. CONSTITUTION:When a normal memory cell Q2 substitutes a bit line B1 for a spare bit line SB1, the corresponding polysilicon link F2 is left being not fused with laser light. When an address input is applied so that a memory cell SQ2 is selected, a read-out voltage of 5V or so is applied on a word line W2 selected by a row decoder. Because the polysilicon link F2 is not being fused at this time, a read-out voltage is applied on the gate of a memory cell SQ2 so that the transistor in the memory cell SQ2 turns ON and a sensing amplifier reads out and outputs the information identical with that programmed in the normal cell Q2. Thus, the faulty memory cell generated in the normal memory cell array 1 can be replaced by a memory cell in a spare memory cell array 13, resulting in a improved production yield. |
