| 摘要 |
PURPOSE:To prolong dark attenuation time and to increase receptive potential by adding nitrogen atoms to a carrier transport layer. CONSTITUTION:The carrier transport layer (1st layer) 2 consisting of a-SiHX added with nitrogen atoms, a carrier generating layer (2nd layer) 3 consisting of a-SiGeHX and a carrier transport layer (3rd layer) 4 consisting of a-SiNHX as a photosensitive layer 1 are formed on a conductive substrate 2 successively from the substrate S side. The layer thickness of the carrier transport layers 2, 4 are properly selected according to the desired receptive potential. For example, the thickness of the carrier transport layers is preferably about 3-5mum sum of the layer thicknesses of the carrier transport layers 2, 4 and the layer thickness ratio of the carrier transport layers 2, 4 is preferably about 2:1 the former to the latter. The mat. of the nitrogen atoms to be added in the carrier transport layers 2, 4 is preferably in a 10<-2=N/Si(atomic ratio)<=0.5 range, more preferably 0.05<=N/Si<=0.2. |
