Semiconductor memory in which data readout operation is carried out over wide power voltage range.

摘要

A programmable read-only memory is disclosed in which each of memory cells is composed of a field effect transistor having a floating gate. This memory is equipped with a word line pull-up circuit which includes a pulse generator generating a pulse signal in response to a change in address signals and a capacitor coupled between the output terminal of the pulse generator and a selected word line, thereby the selected word line taking a level larger than a power supply voltage.