发明名称 Planar magnetron sputtering apparatus and its magnetic source.
摘要 <p>A planar magnetron sputtering apparatus having a magnetic source (10; 50) which is rotated eccentrically around anaxis (11) of a target (13) and has a particular arrangement (10; 50) or a plurality of permanent magnets (30, 31; 41; 51, 52) to form a magnetic field. Using this particular arrangement of permanent magnets (30, 31; 41; 51, 52), the target surface is exposed to a plasma (33; 55; 67; 71-80, 71'-80') for the same period of time, and this increases the uniformity of the target erosion and deposits the sputtering material uniformly on a substrate (16), as a result, an increase of the lifetime of the target (13) can be expected. </p>
申请公布号 EP0211412(A2) 申请公布日期 1987.02.25
申请号 EP19860110626 申请日期 1986.07.31
申请人 FUJITSU LIMITED 发明人 SUZUKI, MASAFUMI;SHIRAI, HIDENOBU
分类号 C23C14/36;C23C14/34;C23C14/35;H01J37/34;H01L21/203;H01L21/285;H01L21/31 主分类号 C23C14/36
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