| 发明名称 |
Method for forming deposited film |
| 摘要 |
A method for forming a deposited film comprises forming in a vacuum chamber housing a substrate therein a deposited film containing silicon on the substrate by subjecting a gas represented by the general formula: <IMAGE> wherein R1, R2, R3 and R4, can be the same or different and are each independently hydrogen or a hydrocarbon group, to polymerization.
|
| 申请公布号 |
US4645684(A) |
申请公布日期 |
1987.02.24 |
| 申请号 |
US19850783490 |
申请日期 |
1985.10.03 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
OSADA, YOSHIYUKI;TSUDA, HISANORI;SANO, MASAFUMI;OMATA, SATOSHI;TAKASU, KATSUJI;HIRAI, YUTAKA |
| 分类号 |
H01L51/42;B05D3/06;B05D7/24;H01L21/20;H01L21/205;H01L31/04;(IPC1-7):B05D3/06 |
主分类号 |
H01L51/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
