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发明名称
Semiconductor devices
摘要
A semiconductor device incorporating two superlattices in the GaAs/AlGaAs system separated by a relatively thick layer of GaAlAs is described. The device displays negative differential conductance.
申请公布号
US4645707(A)
申请公布日期
1987.02.24
申请号
US19850799627
申请日期
1985.11.19
申请人
THE GENERAL ELECTRIC COMPANY, P.L.C.
发明人
DAVIES, RICHARD A.;KELLY, MICHAEL J.
分类号
H01L29/15;H01L29/88;(IPC1-7):B32B7/02;H01L27/12
主分类号
H01L29/15
代理机构
代理人
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