| 摘要 |
A semiconductor memory device, such as a MOS dynamic RAM device, having memory cells each comprising a transfer gate transistor and a capacitor. The capacitor is a so-called groove-type capacitor and has a conductive layer formed on an insulation film attached to the inside surface of a groove formed on a semiconductor substrate. The conductive layer is electrically coupled to the source of the transfer gate transistor. The capacitance of the capacitor is formed between the conductive layer and a second conductive layer formed on the conductive layer via an insulation film, and/or between the conductive layer and the semiconductor substrate.
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