| 摘要 |
PURPOSE:To form high purity microscopic thin film pattern in a highly precise manner without using a mask by a method wherein gas containing the material to be deposited is fed on the substrate on which said material is deposited, the substrate is cooled down to 10 deg.C or below, and an electron beam is made to irradiate on the desired part on the surface of the substrate. CONSTITUTION:When a cooled substrate 11 on which a material will be deposited is provided in the atmosphere of gas molecule 13 containing the material to be deposited, said gas molecule 13 is adsorbed on the surface of the substrate 11 whereon a material is deposited. The quantity of adsorption molecule 12 depends on the temperature of the substrate, and the quantity of adsorption becomes larger as the temperature of the substrate goes down. When an electron beam 16 is made to irradiate on the substrate 11, the adsorption molecule 12 of the atmospheric gas on the part whereon the electron beam 16 is projected is decomposed into the deposition material element 14 to be contained in the atmospheric gas adsorption molecule 12 and a volatile material molecule 15 by the energy of the electron beam, and the deposition material element 14 is deposited on the substrate surface. On the other hand, the volatile material molecule 15 is exhausted. |
