| 摘要 |
PURPOSE:To obtain a transistor with little leakage current by a method wherein a gate electrode with predetermined dimensions is provided on an insulating substrate and the whole surface including this gate electrode is covered with an insulating layer and laminated semiconductor layers, composed of one conductivity type layer and the other conductivity type layer, are provided on a part of the insulating layer above the gate electrode, and a source electrode and a drain electrode are connected to those laminated layers. CONSTITUTION:A gate electrode 2 made of Al or the like is formed on an insulating substrate such as a glass plate and the whole substrate 1 surface including the gate electrode 2 is covered with an insulating layer 3 such as a Ta2O5 layer or an Al2O3 layer. Then a CdSe layer 4a which contains In, Al, Ga or the like and a CdSe layer 4b which contains Cu are formed and laminated on a part of the insulation layer 3 above the gate electrode 2. A source electrode 5 and a drain electrode 6 are provided so as to be selectively contacted with the laminated layers 4a and 4b and extended onto the insulation layer 3 with spacing of several microns to several tens of microns. With this constitution, the decline of a grain boundary potential barrier induced in the layer 4a can be compensated by Cu in the layer 4b so that the leakage current can be suppressed and at the same time ON-OFF ration can be improved. |
