| 摘要 |
PURPOSE:To obtain a thin film FET which has an active layer transparent for visible light and has little dark current by laminating thin films of amorphous SiC:H, Ge or the like and thin films of amorphous Si:H alternately. CONSTITUTION:An NiCr gate electrode 2 is formed on a glass substrate 1. Laminated layers 4 composed of amorphous Si:H 41 and amorphous SiC:H 42 are piled on an Si3H4 film 3 to form an active layer. A Ti layer 6 and an Al layer 7 are laminated to form a source electrode 8 and a drain electrode 9. In order to reduce the resistance of the active layer, the concentration in the laminated layers are controlled by introducing impurities into the amorphous Si:H layers only which have excellent doping characteristics. With this constitution, an active layer transparent for visible light can be obtained and misoperation caused by the unexpected absorption of visible light can be avoided. Moreover, as the current flows in the amorphous Si:H layers owing to the carrier confinement effect of a super-lattice, an FET with a high mobility and high operation speed can be obtained. |
