发明名称 |
Deposition of III-V semiconductor materials |
摘要 |
A low temperature procedure for depositing III-V semiconductor materials that offers the possibility of higher deposition rates together with abrupt junction formation has been found. This process involves the irradiation at a deposition substrate with a high power density radiation source of deposition gases such as organometallic materials, e.g., trimethyl gallium and trimethyl indium. By utilizing a sufficiently high power density, multiphoton processes are induced in the deposition gas that, in turn, lead to advantageous deposited materials.
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申请公布号 |
US4645687(A) |
申请公布日期 |
1987.02.24 |
申请号 |
US19850778274 |
申请日期 |
1985.09.16 |
申请人 |
AT&T LABORATORIES |
发明人 |
DONNELLY, VINCENT M.;KARLICEK, JR., ROBERT F. |
分类号 |
H01L21/205;H01L21/268;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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