发明名称 MASK STRUCTURE FOR X-RAY LITHOGRAPHY
摘要 <p>PURPOSE:To prevent the blurring of the end section of a resist pattern by laminating and forming mask patterns having the same shape consisting of an X-ray absorbent. CONSTITUTION:A layer 3 composed of a compound such as boron nitride and a film 4 consisting of polyimide, etc. are shaped onto a mask base material 2 such as an silicon wafer. First mask patterns 7 consisting of thin-layers in gold, etc. and a coating layer 8 composed of an X0ray transmitting material such as polyimide coating the patterns 7 are formed onto the film 4. Second mask patterns 9 consisting of thin-layers in gold, etc. formed to the same shape as the patterns 7 and a coating layer 10 composed of the same material as the layer 8 are formed onto the layer 8. According to the constitution, the end sections of the patterns 7, 9 are shaped vertically because of the thin patterns 7, 9, thus resulting in no blurring of the end sections of the resist patterns.</p>
申请公布号 JPS6242527(A) 申请公布日期 1987.02.24
申请号 JP19850182404 申请日期 1985.08.20
申请人 SANYO ELECTRIC CO LTD 发明人 YAMADA SETSU
分类号 G03F1/00;G03F1/22;H01L21/027;H01L21/30 主分类号 G03F1/00
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