发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE:To increase the operation speed in any access method by equalizing a bit line and a reference line at the time of the stand-by state and setting them to a voltage approximately equal to the middle between the '0' discrimination level and the '1' discrimination level of a sense amplifier. CONSTITUTION:Q13 to Q15... are N-channel transistors in the circuit diagram of a differential sense amplifying circuit and its attached circuit, and a threshold VTH is used to reduce the supply voltage to an about middle between the '0' discrimination level and the '1' discrimination level of the sense amplifier. N-channel TRs Q11 and Q12 have gates connected to a chip enable signal Ce and have drains connected to point G and have sources connected to points A and F respectively. N-channel TRs Q11 and Q12 are made conductive to charge the bit line and the reference line to prescribed potentials at the time of the stand-by state (Ce='H'). Thus, the operation speed is increased in any access method.</p>
申请公布号 JPH0428096(A) 申请公布日期 1992.01.30
申请号 JP19900133031 申请日期 1990.05.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 NOJIRI ISAO
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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