发明名称 Data I/O circuit with higher integration density for DRAM
摘要 A data input/output circuit operates in an operation cycle in which, when a first latch circuit connected to a first data bus issues 1-bit information to a data output buffer, next 1-bit information is latched in a second latch circuit connected to a second data bus and simultaneously the first data bus is precharged, and in an operation cycle in which, when 1-bit data stored in the second latch circuit is issued to the data output buffer, next 1-bit data is latched in the first latch circuit and simultaneously the second data bus is precharged. Therefore, when one of the latch circuits issues data to the data output buffer, the other latch circuit latches data and is in a standby condition. An access time in which to issue data from bit lines to the data buses is greatly reduced notwithstanding the only two data buses are employed. Accordingly, the chip area occupied by the data buses can be reduced appreciably.
申请公布号 US4646272(A) 申请公布日期 1987.02.24
申请号 US19850706944 申请日期 1985.03.01
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 TAKASUGI, ATSUSHI
分类号 G11C11/401;G11C11/409;G11C11/4093;G11C11/41;(IPC1-7):G11C7/00;G11C11/24 主分类号 G11C11/401
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