| 摘要 |
PURPOSE:To increase the density by composing a contacting pad of a silicide layer and a polycrystalline silicon layer reduced in resistance in the lower portion of the silicide layer to prevent a yield from decreasing due to the displacement of the contact. CONSTITUTION:A contacting pad is formed of a silicide layer 42 and a polycrystalline silicon layer 41A reduced in resistance in the lower portion of the layer 42, and a polycrystalline silicon layer 41 of the original second layer is not physically separated. Thus, if the cell is further microminiaturized and increased in density, even if the position is displaced in case of forming a contacting hole 44 for the layer 42, the hole 44 is merely displaced on the layer 41 of high resistance state. Thus, the hole is not substantially removed, and even if an aluminum layer 45 formed thereafter is partly contacted with the layer 41A of high resistance state through the hole 44, no difficulty occurs. |
