| 摘要 |
PURPOSE:To largely reduce a pinhole defect of an insulating film caused by dust by forming an insulating film to be formed between a gate electrode and a semiconductor layer in 2 or more layers. CONSTITUTION:A gate electrode 2 is formed between lateral rows of display electrodes 8 and a drain electrode 6 is formed between the electrodes 8 in a partitioning manner, and a thin film transistor formed of a gate electrode 2, the first and second insulating films 3, 4, a semiconductor layer 5, a drain electrode 6, and a source electrode 7 at one corner of both crossing portions is so formed as to connect between the electrodes 8. The electrode 2 on a substrate 1 is 4,000Angstrom , the film 3 is 2,000Angstrom , the film 4 is 2,000Angstrom , the layer 5 is 1,000Angstrom , the electrodes 6, 7 are 1mum, and the electrodes 8 are approx. 1,000Angstrom in thickness. |
