NEGATIVE TYPE RESIST MATERIAL AND FORMATION OF RESIST PATTERN

摘要

PURPOSE:To form a fine pattern having high resolving power by a simple process by using a negative type resist material made of the vinyldimethylsilyl ether of the naphthoquinonediazidosulfonic ester of cresol-novolak resin. CONSTITUTION:This negative type resist material is made of the vinyldimethylsilyl ether of the naphthoquinonediazidosulfonic ester of cresol- novolak resin. The vinyldimethylsilyl ether represented by formula II is obtd. by introducing vinyldimethylsilyl groups into the naphthoquinonediazidosulfonic ester of cresol-novolak resin represented by formula I. In the formulae, each of k, l, m and n is a positive integer, n=k+l and 4<=n+m<=20. The resist material is used as the resist of the upper resist layer of a two-layered resist film and can be exposed with far ultraviolet rays, so that resolution is obtd.