| 摘要 |
PURPOSE:To improve the yield and good part P/W of a wafer by forming a silver-plated layer in the state that a mesa step is coated to be protected by a thick polyimide layer of 10-15mum and a photoresist layer. CONSTITUTION:After an oxide film layer 2, a Schottky window, a Schottky metal layer 3, a front surface titanium metal 4, a mesa unit, a back surface titanium metal 9 are formed on a semiconductor substrate 1 similarly by a conventional manufacturing method, the substrate 1 is coated to be protected by a polyimide layer (approx. 10-15mum) 6. A photoresist layer 7 is utilized as an etching resistant mask by a normal photoetching method to remove by etching the polyimide layer on the window, thereby exposing the titanium metal on the window. Then, after a silver bump plated layer 8 is formed on the opened front surface titanium metal by utilizing element characteristics similarly by a conventional manufacturing method, the photoresist layer, the polyimide layer are sequentially removed by etching. At this time since the silver layer is not possibly corroded by the etchant of the polyimide layer, the polyimide layer can be etched in a self-alignment. |
