| 摘要 |
PURPOSE:To increase the density by eliminating the physical separation of a polycrystalline silicon layer reduced in resistance to become a contacting pad, and partly reducing the resistance of the layer in the original high resistance state to electrically separate to prevent a yield from decreasing due to the displacement of the contact. CONSTITUTION:A polycrystalline silicon layer 41 reduced in resistance to become a contacting pad is not physically separated, and the layer of the original high resistance state is partly reduced in resistance to be electrically separated. Thus, if the cell is further microminiaturized and increased in density, even if the position is displaced in case of forming a contacting hole 44 for the layer 41, the hole 44 is merely displaced on the layer 42 of high resistance state. Thus, the hole is not substantially removed, and even if an aluminum layer 45 formed thereafter is partly contacted with the layer 42 of high resistance state through the hole 44, no difficulty occurs. |
