| 摘要 |
<p>PURPOSE:To enhance a heat diffusion characteristic and to obtain a high response speed, by constituting a substrate of a semiconductive material and forming an impurity diffusion layer for permitting the passage of a current in the substrate to use the same as the wiring part of a membrane type resistor. CONSTITUTION:A membrane resistor is constituted so that an insulating layer 63 is formed to a substrate 61 to perform patterning and subsequently used as a mask to dope the substrate 61 with impurities to form impurity diffusion layers 62a, 62b and a metal pattern 64 is further formed on said diffusion layers 62a, 62b. Further, a passivation film 65 is formed on these layers. By this method, the wiring parts 64b, 64c and diffusion layers 62a, 62b of the pattern 64 are electrically connected in parallel. Therefore, a current flow not only to the wiring parts 64b, 64c between a temp. detection part 64a also used as a heater and electrode take-out ports P1, P2 but also to the diffusion layers 62, 62b. As a result, the line width or thickness of the wiring parts 64b, 64c can be substantially reduced. By this method, a heat diffusion characteristic is enhanced and excellent sensitivity and a high response speed can be obtained.</p> |
