| 摘要 |
PURPOSE:To reduce the interfacial levels of a channel part of an embedded type electrode, by using silicide as a third electrode, which is embedded in a non-single crystal semiconductor that is formed between first and second conductor electrodes. CONSTITUTION:At first, a first conductor electrode 6 and a non-single crystal semiconductor 8a are formed on a substrate 10. A pattern of metal 11, which is a constituent element of a silicide, is formed on the surface of the semiconductor 8a. By heat-treating the pattern, the metal 11 and the semiconductor 8a undergo solid phase reaction, and silicide 9 is formed. The interface between the silicide 9 and the semiconductor 8a advances in the non-single crystal with the solid phase reaction, and the metal 11 is decreased. Thereafter, the remaining metal 11a is removed. Then, a second non-single crystal semiconductor 8b and a second conductor 7 are formed. As a result, an embedded type electrode, which has the excellent interface and can control the drain current with a small gate voltage, can be obtained. |
