| 摘要 |
PURPOSE:To prevent an electrically conductive thin film from damage and to avoid pattern deformation in usage, by providing a light shielding thin film such as metal (oxide) on conductive amorphous semiconductor film formed on an insulating transparent substrate. CONSTITUTION:An amorphous semiconductor thin film 5 of high electric conductivity is formed on an insulating transparent substrate 1 with plasma decomposition method, a light shielding thin film 3 made of metal (oxide) is coated to form a bland plate. Photo resist is coated on it, exposure is partially and selectively made with a prescribed pattern and etching is made by taking a pattern 4 of photo resist obtained by development processing as a mask. The photo mask is formed without etching of an amorphous semiconductor thin film 5. Thus, stable conductivity is kept by using substance not chemically similar to the light shielding thin film as the raw material of the transparent conductive thin film, without degradation or removal of the transparent conductive thin film in the processing of light shielding thin film. |
