发明名称 |
MATERIAL FOR SPUTTERING TARGET |
摘要 |
PURPOSE:To form a film of a uniform thickness free from defects such as pinholes on a substrate of a large area by using a circular sputtering target having an uneven or inclined surface part of a specified shape as a sputtering target for forming a thin film. CONSTITUTION:When a circular sputtering target is produced as an evaporating source for forming a thin film, the thickness of a material 2 for the target is continuously changed from the center toward the periphery by making the surface uneven so that the angle of projection of sputtered particles coincides with a direction in which the thickness of a film formed on a substrate becomes small, or the cross-section of a material 3 for the target is made symmetric with respect to rotation by providing the cross-sectional shape of a nearly triangular body of rotation. A film of a uniform thickness is formed even on a large-sized substrate by sputtering with the resulting sputtering target. |
申请公布号 |
JPS6237369(A) |
申请公布日期 |
1987.02.18 |
申请号 |
JP19850174519 |
申请日期 |
1985.08.08 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
UCHIDA KIYOSHI;KUDO YOSHIHIKO |
分类号 |
C23C14/34;H01F41/18;H01L21/203;H01L21/285;H01L21/31 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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