| 摘要 |
An epitaxial growth system comprises a vacuum vessel, a plasma generating apparatus for exciting a doping gas, a source for supplying the doping gas and a substrate within the vacuum vessel on which a semiconductor is being grown or after having been grown, wherein the doping gas-supply source includes an aperture for doping a part of the doping gas into the substrate and an aperture for exhausting a remaining portion of the doping gas into the vacuum vessel. An epitaxial growth method comprises the steps of growing or having been growing a semiconductor on a substrate within a vacuum vessel by an epitaxy method, doping a part of gas supplied from a doping gas supply source into the substrate during or after the semiconductor is grown, and exhausting a remaining gas into the vacuum vessel, wherein the gas doped into the substrate is made at least to be a plasma gas. An epitaxial growth method comprises the steps of depositing a first element selected from at least one of Hg, Mg, Zn and Cd and a second element selected from at least one of S, Se and Te on a substrate within a vacuum vessel, and irradiating an excited species of nitrogen, oxygen molecule or atom excited by an electron-cyclotron-resonance (ECR) plasma on the substrate. <IMAGE> |
