发明名称 |
Bipolar transistor and method of manufacture. |
摘要 |
<p>A bipolar transistor module which can be implemented into existing CMOS processes without the use of buried layers of epitaxy is described. The transistor makes use of a synthesis of new ideas to achieve high performance. Extended polysilicon electrodes (2,4,6) are utilised to reduce device dimensions and a compatible well is described which maintains a p-channel MOS transistor electrical characteristics whilst lowering the collector series resistance. <IMAGE></p> |
申请公布号 |
EP0568206(A2) |
申请公布日期 |
1993.11.03 |
申请号 |
EP19930302685 |
申请日期 |
1993.04.06 |
申请人 |
PHOENIX VLSI CONSULTANTS LIMITED |
发明人 |
HUNT, PETER CHARLES |
分类号 |
H01L21/8249;H01L27/06;H01L29/08;H01L29/423;H01L29/45;(IPC1-7):H01L27/06;H01L29/41;H01L21/82 |
主分类号 |
H01L21/8249 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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