| 摘要 |
PURPOSE:To form a very minute resist pattern, by forming a specified resist pattern having a specified shape on a substrate, projecting plasma including F or Cl, etching the resist with O2 gas in an anisotropic method, and thereafter immersing the pattern in an organic solution. CONSTITUTION:A resist pattern 2 is formed on a semiconductor substrate 1. Plasma is projected on the resist pattern 2 by using a cylindrical plasma etching device and a gas comprising C2HCl3/5% O2 at 0.4Torr for 1min at plasma generating power of 15W. Then, by using a reactive ion etching device, etching is performed with O2 gas, and the surface of the resist pattern 2 is removed by 0.1mum or more in an anisotropic mode. During this period, the etching is performed for 1min under the conditions of pressure of 15mTorr, RF power of 175W and O2 gas flow rate of 40secM. Finally the pattern is immersed (5) in isoamyl acetate for 10sec, and a very minute resist pattern 4, whose pattern width is 0.1mum, is formed. |
