发明名称 RESIST PATTERN FORMATION
摘要 PURPOSE:To obtain a cross-sectional, favorable resist pattern which stand vertically even if there is a focus displacement by a method wherein the surface of a substrate is coated with a highly sensitive resist, the highly sensitive resist film is coated with a low sensitivity resist without performing heat treatment, and then the substrate is exposed, developed and patterned. CONSTITUTION:When the surface of a substrate 11 is coated with a highly sensitive resist to form a highly sensitive resist film 12 and coated with a low sensitivity resist without being prebaked, a low sensitivity resist film 13 is formed on the most upper layer, a sensitivity-altering region 14 is formed between the highly sensitive resist film 12 and the low sensitivity resist film 13. After that, prebaking, exposure and development are performed. With respect to the formed resist films, the low sensitivity resist, which is directed where it remains (is not pulled out) with a small amount of light, is provided on the most upper layer, and the highly sensitive resist, which is directed where it is removed (is pulled out) with a small amount of light, is provided on the lowest layer, thereby obtaining a resist pattern with favorable shape of the cross-section.
申请公布号 JPS6236823(A) 申请公布日期 1987.02.17
申请号 JP19850176445 申请日期 1985.08.10
申请人 FUJITSU LTD 发明人 ONODERA YASUO
分类号 G03F7/26;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F7/26
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