| 摘要 |
A solid-state image pickup device includes a semiconductor structure, a photosensitive cell array formed on the semiconductor structure and having a plurality of photosensitive cells, and a shift register formed on the semiconductor structure for selectively driving a plurality of photosensitive cells of the cell array to cause pixel signals to be produced therefrom. The shift register includes a plurality of register stages associated with the cell array, and two sets of an initiator circuit and a terminator circuit, each set being arranged at the ends of the plurality of register stages. Interconnections between the plurality of register stages, and selective connections between the two sets of the initiator and terminator circuits and the first and last stages of the plurality of register stages are formed in manufacturing processes on the semiconductor structure in accordance with a direction in which the shift register is to be driven in shifting operation. A method of manufacturing the solid-state image pickup device is also provided.
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