发明名称 Method for the manufacture of large area silicon crystal bodies for solar cells
摘要 Recrystallized silicon plates are readily removed from a carrier member after melting and recrystallization, the carrier member being composed of a material that is not appreciably wettable by molten silicon, through the use of a parting agent between the silicon and the carrier in solid form as a powder or a raw foil. Fine quartz sand, very fine grained silicon powder, or quartz glass fiber fabric can be employed as the parting agent. The method is employed for the inexpensive manufacture of self-supporting silicon crystal plates for solar cells and allows throughput drawing rates of greater than 1 m2/min.
申请公布号 US4643797(A) 申请公布日期 1987.02.17
申请号 US19850759243 申请日期 1985.07.26
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 GRABMAIER, CHRISTA;KOTSCHY, JOSEF;LERCHENBERGER, AUGUST
分类号 H01L31/04;C30B11/00;C30B11/14;C30B33/00;(IPC1-7):C01B31/36 主分类号 H01L31/04
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