MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To manufacture an active matrix substrate having small shortcircuit occurring probability without increasing the number of photomasks by reetching the uppermost layer by an isotropic method when two types or more of thin films are etched with the same photoresist patterns as masks to separate a distance between source and drain metals and a gate metal. CONSTITUTION:The second metal film 18 is reetched while allowing the second resist pattern to remain in an etching separating process of source and drain. Thus, the pattern edge of the second metal film 18 can be disposed inside a plasma CVD film (SiN, a-Si) thereunder. A distance between electrodes of the portions which are readily shortcircuited can be separated by this method.